Open AccessCompact silicon photonic hybrid ring external cavity (SHREC)/InGaSb-AlGaAsSb wavelength-tunable laser diode operating from 1881-1947 nm
Author(s) -
Jia Xu Brian Sia,
Wanjun Wang,
Xiang Li,
Xin Guo,
Jinchuan Zhou,
Callum G. Littlejohns,
Zecen Zhang,
Chongyang Liu,
Graham T. Reed
Publication year - 2020
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.383524
Subject(s) - materials science , optoelectronics , optics , photonics , diode , laser , lasing threshold , optical amplifier , laser diode , silicon photonics , wavelength , optical fiber , physics
In recent years, the 2 µm waveband has been gaining significant attention due to its potential in the realization of several key technologies, specifically, future long-haul optical communications near the 1.9 µm wavelength region. In this work, we present a hybrid silicon photonic wavelength-tunable diode laser with an operating range of 1881-1947 nm (66 nm) for the first time, providing good compatibility with the hollow-core photonic bandgap fiber and thulium-doped fiber amplifier. Room-temperature continuous-wave operation was achieved with a favorable on-chip output power of 28 mW. Stable single-mode lasing was observed with side-mode suppression ratio up to 35 dB. Besides the abovementioned potential applications, the demonstrated wavelength region will find critical purpose in H 2 O spectroscopic sensing, optical logic, signal processing as well as enabling the strong optical Kerr effect on Si.