Misalignment measurement with dual-frequency moiré fringe in nanoimprint lithography

We explore an easy-to-implement moiré-based measurement scheme for the mask-wafer misalignment in nanoimprint lithography. By introducing the beat signal of moiré fringes, the measurement range increase by dozens or even hundreds of times, while the measurement accuracy doesn't get affected and still kept in nanoscale. Moreover, the alignment signal, collected throughout the whole imprint process, is independent of the wafer-mask gap and beam fluctuation, which makes it very suitable for the misalignment measurement in NIL. The experiment shows that sub-10 nm alignment could be obtained within a measurement range of 500µm, which is expected to be improved after the parameter optimization.