Open AccessPhotonic crystal tunnel junction deep ultraviolet light emitting diodes with enhanced light extraction efficiency
Author(s) -
Walter Shin,
Ayush Pandey,
Xianhe Liu,
Yi Sun,
Zetian Mi
Publication year - 2019
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.380739
Subject(s) - materials science , light emitting diode , optoelectronics , quantum efficiency , ultraviolet , photonic crystal , wafer , tunnel junction , diode , optics , planar , photonics , quantum tunnelling , physics , computer graphics (images) , computer science
We report on the demonstration of top emitting AlGaN tunnel junction deep ultraviolet (UV) light emitting didoes (LEDs) operating at ∼267 nm. We show, both theoretically and experimentally, that the light extraction efficiency can be enhanced by nearly a factor of two with the incorporation of AlGaN nanowire photonic crystal structures. A peak wall-plug efficiency (WPE) ∼3.5% and external quantum efficiency (EQE) ∼5.4% were measured for AlGaN LEDs directly on-wafer without any packaging. This work demonstrates a viable path for achieving high efficiency deep UV LEDs through the integration of AlGaN planar and nanoscale structures.