Open AccessTerahertz wave generation via difference frequency generation using 2D InxGa1-xSe crystal grown from indium flux
Author(s) -
Yohei Sato,
Chao Tang,
Katsuya Watanabe,
Junya Ohsaki,
Takuya Yamamoto,
Nobuki Tezuka,
Tadao Tanabe,
Yutaka Oyama
Publication year - 2020
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.28.000472
Subject(s) - terahertz radiation , crystal (programming language) , materials science , optics , energy conversion efficiency , indium , diffraction , lattice constant , flux (metallurgy) , diffraction efficiency , analytical chemistry (journal) , optoelectronics , physics , chemistry , chromatography , computer science , metallurgy , programming language
We demonstrate the generation of THz waves (frequency 9.7 THz) using difference frequency generation in an In x Ga 1-x Se mixed crystal grown from In flux. The amount of indium and the lattice constant of the crystal were evaluated using electron micro probe analysis and X-ray diffraction, respectively. We believe that the Ga sites were substituted by In atoms in the In x Ga 1-x Se crystal because the In content, estimated according to the Vegard's law, was similar to that measured by EPMA. The maximum power of the generated THz wave was 39 pJ and the conversion efficiency was 1.7×10 -5 J -1 . This conversion efficiency was 28 times larger than that reported for undoped GaSe crystal.