Open AccessHomogeneous ZnO nanowire arrays p-n junction for blue light-emitting diode applications
Author(s) -
Mingming Su,
Tanglei Zhang,
Jun Su,
Wenzhu Zhao,
Yongming Hu,
Yihua Gao,
Haoshuang Gu,
Xianghui Zhang
Publication year - 2019
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.27.0a1207
Subject(s) - homojunction , materials science , optoelectronics , nanowire , light emitting diode , diode , doping , exciton , blueshift , band gap , substrate (aquarium) , electroluminescence , photoluminescence , nanotechnology , oceanography , physics , quantum mechanics , layer (electronics) , geology
ZnO is a promising short-wavelength light-emitting materials for its wide bandgap (3.37 eV) and large exciton binding energy (∼60 meV), however, practical p-type doped ZnO is the main challenge in this field. Here, Blue light-emitting diodes (LEDs) based on the homogeneous junctions of Sb doped ZnO nanowire arrays grown on Ga doped ZnO single crystal substrate are fabricated. Element analysis, FET and Hall-effect measurements demonstrate that the Sb atom has been successfully doped into ZnO nanowires to from p-type conductivity. On the benefit of high quality of nano-size homojunction, the fabricated LED shows low turn-on voltage turn-on voltage as low as 3.4 V and strong blue emission peak located at 425 nm at room temperature, which originate from interfacial recombination of ZnO nanowire p-n homojunctions. The present blue LED based on ZnO material may have potential applications in short-wavelength optoelectronic devices.