Open AccessHybrid Si-VO2 modulator with ultra-high extinction ratio based on slot TM mode
Author(s) -
B. M. Younis,
A. M. Heikal,
Mohamed Hussein,
S. S. A. Obayya
Publication year - 2019
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.27.037454
Subject(s) - extinction ratio , materials science , insertion loss , optics , optical modulator , silicon on insulator , figure of merit , bandwidth (computing) , optoelectronics , wavelength , silicon , phase modulation , physics , telecommunications , computer science , phase noise
Nowadays, the development of modern optical systems relies on optical device size minimization and operating power reduction. Optical modulator based on silicon on insulator (SOI) platform is a key element in different optical systems. Therefore, the optical modulator with compact size and low insertion loss could improve the optical system efficiency. In this work, a novel compact optical modulator based on hybrid plasmonic/silicon layers is introduced. The full vectorial finite element method (FV-FEM) is used to numerically analyze the proposed design. Vanadium dioxide (VO 2 ) is also utilized as a cap layer to control the modulation process. The insertion loss (IL) and extinction ratio (ER) of the suggested modulator are equal to 2.1 dB/µm and 28 dB/µm, respectively, at the operating wavelength 1.55 µm. Consequently, high figure-of-merit (FoM) =ER/IL = 13.5 is achieved with an optical bandwidth (ER > 3 dB) greater than 1 µm, which is large in comparison to pervious designs.