Open AccessElectrically injected 164µm emitting In065Ga035As 3-QW laser diodes grown on mismatched substrates by MOVPE
Author(s) -
Honghyuk Kim,
Bei Shi,
Zachary Lingley,
Q. Li,
Ayushi Rajeev,
Miles Brodie,
Kei May Lau,
T. F. Kuech,
Yongkun Sin,
Luke J. Mawst
Publication year - 2019
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.27.033205
Subject(s) - materials science , metalorganic vapour phase epitaxy , optoelectronics , epitaxy , diode , quantum well , diffraction , laser , substrate (aquarium) , transmission electron microscopy , optics , semiconductor laser theory , gallium arsenide , layer (electronics) , nanotechnology , geology , oceanography , physics
We report the characteristics of the strained In 0.65 Ga 0.35 As triple quantum well (QW) diode lasers grown by metalorganic vapor phase epitaxy (MOVPE) on lattice-mismatched substrates such as GaAs or Si, by utilizing InP metamorphic buffer layers (MBLs) in conjunction with InAs nanostructure-based dislocation filters. As the lattice-mismatch between the substrate and InP MBL increases, higher threshold current densities and lower slope efficiencies were observed, together with higher temperature sensitivities for the threshold current and slope efficiency. Structural analysis performed by both high-resolution X-ray diffraction (HR-XRD) and transmission electron microscopy indicates graded and/or rougher QW interfaces within the active region grown on the mismatched substrate, which accounts for the observed devices characteristics.