Demonstration of GaN-based vertical-cavity surface-emitting lasers with buried tunnel junction contacts | Zendy

SeungGeun Lee | Zendy; Charles A. Forman | Zendy; Jared A. Kearns | Zendy; John T. Leonard | Zendy; Daniel A. Cohen | Zendy; Shuji Nakamura | Zendy; Steven P. DenBaars | Zendy

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Demonstration of GaN-based vertical-cavity surface-emitting lasers with buried tunnel junction contacts

Author(s) -

SeungGeun Lee,

Charles A. Forman,

Jared A. Kearns,

John T. Leonard,

Daniel A. Cohen,

Shuji Nakamura,

Steven P. DenBaars

Publication year - 2019

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.27.031621

Subject(s) - materials science , vertical cavity surface emitting laser , optics , optoelectronics , lasing threshold , laser , aperture (computer memory) , tunnel junction , wavelength , semiconductor laser theory , semiconductor , quantum tunnelling , physics , acoustics

We report III-nitride vertical-cavity surface-emitting lasers (VCSELs) with buried tunnel junction (BTJ) contacts. To form the BTJs, GaN TJ contacts were etched away outside the aperture followed by n-GaN regrowth for current spreading. Under pulsed operation, a BTJ VCSEL with a 14 µm diameter aperture showed a lasing wavelength of 430 nm, a threshold current of ∼20 mA (12 kA/cm 2 ), and a maximum output power of 2.8 mW. Under CW operation, an 8 µm aperture VCSEL showed a differential efficiency of 11% and a peak output power of ∼0.72 mW.

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