Open AccessDemonstration of GaN-based vertical-cavity surface-emitting lasers with buried tunnel junction contacts
Author(s) -
SeungGeun Lee,
Charles A. Forman,
Jared Kearns,
John T. Leonard,
Daniel Cohen,
Shuji Nakamura,
Steven P. DenBaars
Publication year - 2019
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.27.031621
Subject(s) - materials science , vertical cavity surface emitting laser , optics , optoelectronics , lasing threshold , laser , tunnel junction , aperture (computer memory) , wavelength , semiconductor laser theory , diode , quantum tunnelling , physics , acoustics
We report III-nitride vertical-cavity surface-emitting lasers (VCSELs) with buried tunnel junction (BTJ) contacts. To form the BTJs, GaN TJ contacts were etched away outside the aperture followed by n-GaN regrowth for current spreading. Under pulsed operation, a BTJ VCSEL with a 14 µm diameter aperture showed a lasing wavelength of 430 nm, a threshold current of ∼20 mA (12 kA/cm 2 ), and a maximum output power of 2.8 mW. Under CW operation, an 8 µm aperture VCSEL showed a differential efficiency of 11% and a peak output power of ∼0.72 mW.