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>30 MW peak power from distributed face cooling tiny integrated laser
Author(s) -
Lihe Zheng,
Arvydas Kausas,
Takunori Taira
Publication year - 2019
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.27.030217
Subject(s) - materials science , chip , sapphire , laser , optics , nanosecond , dissipation , optoelectronics , power (physics) , computer science , telecommunications , physics , quantum mechanics , thermodynamics
The Distributed Face Cooling (DFC) chip was fabricated from four pieces of 1 mm-length Nd:YAG plate sandwiched in four pieces of sapphire heat spreaders through advanced surface activated bonding (SAB) at room temperature. A sub-nanosecond (665.7ps) pulsed DFC-chip tiny integrated laser was achieved with output energy of 21.5 mJ and peak power of 32.3 MW with saturable absorber Cr 4+ :YAG. By finite element analysis, we confirmed the advantages of heat dissipation from DFC-chip compared with conventional bulk-chip. The SAB-DFC-chip based ubiquitous high peak power tiny integrated laser was experimentally within reach for laser-armed robot.

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