Open AccessTerahertz nonvolatile in situ electrically erasable-rewritable photo-memory based on indium oxide/PEDOT:PSS
Author(s) -
Bin Liu,
Jingyu Liu,
Hongyu Ji,
Wei Wang,
Jingling Shen,
Bo Zhang
Publication year - 2019
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.27.028792
Subject(s) - materials science , optoelectronics , terahertz radiation , pedot:pss , non volatile memory , indium , indium tin oxide , optics , oxide , nanotechnology , thin film , layer (electronics) , physics , metallurgy
A terahertz (THz) nonvolatile in situ electrically erasable-rewritable photo-memory based on indium oxide (In 2 O 3 ) nanoparticles is reported. The In 2 O 3 /PEDOT:PSS/quartz sample increases its conductivity and attenuates its THz transmission under optical excitation. When this optical excitation is terminated, the modulated THz transmission recovers to its original value in an air environment slightly. The modulated THz transmission recovered more rapidly with increasing bias voltage. Nonvolatile digital information storage is enabled when the In 2 O 3 /PEDOT:PSS/quartz structure is encapsulated in nitrogen. The photo-memory can be rewritten after in situ electrical erasure. The results show that in situ electrically erasable terahertz nonvolatile rewritable photo-memories are feasible.