Open AccessEnhancing Pockels effect in strained silicon waveguides
Author(s) -
Irene Olivares,
Jorge Parra,
A. Brimont,
Pablo Sanchís
Publication year - 2019
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.27.026882
Subject(s) - pockels effect , optics , materials science , cladding (metalworking) , refractive index , modulation (music) , silicon , optoelectronics , silicon photonics , physics , laser , acoustics , metallurgy
The magnitude and origin of the electro-optic measurements in strained silicon devices has been lately the object of a great controversy. Furthermore, recent works underline the importance of the masking effect of free carriers in strained waveguides and the low interaction between the mode and the highly strained areas. In the present work, the use of a p-i-n junction and an asymmetric cladding is proposed to eliminate the unwanted carrier influence and improve the electro-optical modulation response. The proposed configuration enhances the effective refractive index due to the strain-induced Pockels effect in more than two orders of magnitude with respect to the usual configuration.