Open AccessCMOS-compatible all-Si metasurface polarizing bandpass filters on 12-inch wafers
Author(s) -
Zhengji Xu,
Yuan Dong,
Chi-Che Tseng,
Ting Hu,
Jianhua Tong,
Qize Zhong,
Nanxi Li,
Larry Sim,
Keng Heng Lai,
Lin Yang,
Dongdong Li,
Yu Liu,
Vladimir Bliznetsov,
Yuan Hsing Fu,
Shiyang Zhu,
Qunying Lin,
Dao Hua Zhang,
Yuandong Gu,
Navab Singh,
DimLee Kwong
Publication year - 2019
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.27.026060
Subject(s) - extinction ratio , materials science , optics , wafer , band pass filter , optoelectronics , cmos , polarization (electrochemistry) , physics , wavelength , chemistry
The implementation of polarization controlling components enables additional functionalities of short-wave infrared (SWIR) imagers. The high-performance and mass-producible polarization controller based on Si metasurface is in high demand for the next-generation SWIR imaging system. In this work, we report the first demonstration of all-Si metasurface based polarizing bandpass filters (PBFs) on 12-inch wafers. The PBF achieves a polarization extinction ratio of above 10 dB in power within the passbands. Using the complementary metal-oxide-semiconductor (CMOS) compatible 193nm ArF deep ultra-violet (DUV) immersion lithography and inductively coupled plasma (ICP) etch processing line, a device yield of 82% is achieved.