Open AccessRealization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate
Author(s) -
Takeshi Kamikawa,
Srinivas Gandrothula,
Masahiro Araki,
Hongjian Li,
Valeria Bonito Oliva,
Feng Wu,
Daniel Cohen,
James S. Speck,
Steven P. DenBaars,
Shuji Nakamura
Publication year - 2019
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.27.024717
Subject(s) - materials science , laser , substrate (aquarium) , epitaxy , optoelectronics , lasing threshold , diode , optics , thin film , bar (unit) , layer (electronics) , composite material , nanotechnology , wavelength , oceanography , physics , meteorology , geology
A nonpolar edge emitting thin film InGaN laser diode has been separated from its native substrate by mechanical tearing with adhesive tape, combining the benefits of Epitaxial Lateral Overgrowth (ELO) and cleavability of nonpolar GaN crystal. The essence of ELO is mainly to weakening strength between native substrate and the fabricated laser device on top of it. We report a 3 mm long laser bar removed from its native GaN substrate. We confirmed edge emitting lasing operation after cleaving facets on a separated thin bar. Threshold current density of the laser was measured to be as low as 2.15 kA/cm 2 .