Open AccessOutput energy enhancement in a mode-locked Er-doped fiber laser using CVD-Bi2Se3 as a saturable absorber
Author(s) -
Quanxin Guo,
Jie Pan,
Yanjun Liu,
Huaijun Si,
Zhaogeng Lu,
Xile Han,
Jinjuan Gao,
Zitan Zuo,
Huanian Zhang,
Shouzhen Jiang
Publication year - 2019
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.27.024670
Subject(s) - saturable absorption , materials science , fiber laser , chemical vapor deposition , optics , optoelectronics , laser , doping , bismuth , topological insulator , physics , wavelength , metallurgy , quantum mechanics
In this study, the output energy in topological insulators (TIs)-based Erbium-doped fiber laser (EDFL) was improved using two strategies: bidirectional pumped laser cavity and saturable absorber (SA) with high damage threshold and large modulation depth. Using the chemical vapor deposition (CVD) method, Bismuth Selenide (Bi 2 Se 3 ) film was synthesized and improved to a SA. Employing this CVD-Bi 2 Se 3 SA in an EDFL, bright and bright-dark soliton operations were achieved. The average output power/pulse energy was 82.6 mW/48.3 nJ and 81.2 mW/47.5 nJ, respectively. The results demonstrate that CVD-Bi 2 Se 3 can act as an excellent performance material to improve output power performance in TISA-based EDFL.