Open AccessTriple-mesa avalanche photodiodes with very low surface dark current
Author(s) -
Yuan Yuan,
Yabo Li,
J. Abell,
Jiyuan Zheng,
Keye Sun,
C. J. Pinzone,
Joe C. Campbell
Publication year - 2019
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.27.022923
Subject(s) - dark current , avalanche photodiode , mesa , photodiode , photodetector , optics , optoelectronics , apds , materials science , physics , detector , computer science , programming language
The dark current of a photodetector is a key parameter for high-sensitivity optical receivers. We report low-dark-current, triple-mesa avalanche photodiodes that have ~50 times lower dark current than conventional single-mesa devices, and suppress surface leakage. The tolerances of triple-mesa avalanche photodiode parameters are presented.