Triple-mesa avalanche photodiodes with very low surface dark current | Zendy

Yuan Yuan | Zendy; Yabo Li | Zendy; Joshua Abell | Zendy; Jiyuan Zheng | Zendy; Keye Sun | Zendy; C. J. Pinzone | Zendy; Joe C. Campbell | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Triple-mesa avalanche photodiodes with very low surface dark current

Author(s) -

Yuan Yuan,

Yabo Li,

Joshua Abell,

Jiyuan Zheng,

Keye Sun,

C. J. Pinzone,

Joe C. Campbell

Publication year - 2019

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.27.022923

Subject(s) - dark current , avalanche photodiode , mesa , photodiode , photodetector , optics , optoelectronics , apds , sensitivity (control systems) , materials science , physics , detector , computer science , programming language , electronic engineering , engineering

The dark current of a photodetector is a key parameter for high-sensitivity optical receivers. We report low-dark-current, triple-mesa avalanche photodiodes that have ~50 times lower dark current than conventional single-mesa devices, and suppress surface leakage. The tolerances of triple-mesa avalanche photodiode parameters are presented.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research