Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN | Zendy

Ryan M. Anderson | Zendy; Daniel A. Cohen | Zendy; Shlomo Mehari | Zendy; Shuji Nakamura | Zendy; Steven P. DenBaars | Zendy

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Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN

Author(s) -

Ryan M. Anderson,

Daniel A. Cohen,

Shlomo Mehari,

Shuji Nakamura,

Steven P. DenBaars

Publication year - 2019

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.27.022764

Subject(s) - materials science , nanoporous , optoelectronics , laser , cladding (metalworking) , optics , electrical resistivity and conductivity , sublimation (psychology) , gallium nitride , layer (electronics) , composite material , nanotechnology , physics , psychology , quantum mechanics , psychotherapist

We report observations of lateral mode confinement by a tapering nanoporous-GaN layer in the n-side cladding of a blue-emitting InGaN laser diode grown on the semipolar (202¯1¯) plane of bulk GaN. Little additional confinement occurred in the transverse direction, and the nanoporous layer did not serve as a current aperture. Nanoporous-GaN, with Si-doping of 8x10 18 cm -3 and 20% porosity had a bulk resistivity of 3 Ω-cm and a thermal conductivity of 4 W/m-K, in general agreement with data reported on c-plane VCSEL structures. An excess modal loss of 19 cm -1 was found.

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