Open AccessElectrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN
Author(s) -
Ryan Anderson,
Daniel Cohen,
Shlomo Mehari,
Shuji Nakamura,
Steven P. DenBaars
Publication year - 2019
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.27.022764
Subject(s) - materials science , nanoporous , optoelectronics , laser , cladding (metalworking) , optics , gallium nitride , electrical resistivity and conductivity , tapering , diode , layer (electronics) , composite material , nanotechnology , physics , electrical engineering , computer graphics (images) , engineering , computer science
We report observations of lateral mode confinement by a tapering nanoporous-GaN layer in the n-side cladding of a blue-emitting InGaN laser diode grown on the semipolar (202¯1¯) plane of bulk GaN. Little additional confinement occurred in the transverse direction, and the nanoporous layer did not serve as a current aperture. Nanoporous-GaN, with Si-doping of 8x10 18 cm -3 and 20% porosity had a bulk resistivity of 3 Ω-cm and a thermal conductivity of 4 W/m-K, in general agreement with data reported on c-plane VCSEL structures. An excess modal loss of 19 cm -1 was found.