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SiN/Si double-layer platform for ultralow-crosstalk multiport optical switches
Author(s) -
Ryotaro Konoike,
Keijiro Suzuki,
Ken Tanizawa,
Satoshi Suda,
Hiroyuki Matsuura,
Shu Namiki,
Hitoshi Kawashima,
Kazuhiro Ikeda
Publication year - 2019
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.27.021130
Subject(s) - crosstalk , optical switch , optoelectronics , materials science , silicon nitride , silicon , scalability , optics , computer science , physics , database
We experimentally demonstrate a double-layer platform of silicon nitride and silicon for ultralow-crosstalk multiport optical switches. By using a silicon nitride overpass with a large gap of 1.5 µm, we achieve a crosstalk of less than -50 dB and -45 dB almost entirely in the C-band for 4 × 4 and 16 × 16 switches, respectively. To demonstrate the scalability of the platform, we also measured a 32 × 32 passive test device and show that a worst-case crosstalk of less than -50 dB is feasible with appropriate gate switches.

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