Open Access1310 nm InAs quantum-dot microdisk lasers on SOI by hybrid epitaxy
Author(s) -
Bin Zhang,
Wen-Qi Wei,
Jianhuan Wang,
Jieyin Zhang,
Huan Cong,
Qi Feng,
Ting Wang
Publication year - 2019
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.27.019348
Subject(s) - materials science , quantum dot , silicon on insulator , optoelectronics , molecular beam epitaxy , epitaxy , laser , quantum dot laser , silicon , photonics , optics , semiconductor laser theory , nanotechnology , semiconductor , physics , layer (electronics)
Direct epitaxial growth of O-band InAs/GaAs quantum-dot laser on Si substrates has been rapidly developing over the past few years. But most of current methodologies are not fully compatible with silicon-on-insulator (SOI) technology, which is the essential platform for silicon photonic devices. By implementing an in situ III-V/Si hybrid growth technique with (111)-faceted Si hollow structures, we demonstrate the first optically pumped InAs/GaAs quantum-dot microdisk laser on SOI substrates grown by molecular beam epitaxy (MBE). The microdisk laser on SOI is characterized with threshold pump power as low as 0.39 mW and a Q factor of 3900 at room temperature. Additionally, the compared device performance of InAs quantum-dot microdisk lasers on GaAs, Si (001) and SOI are simultaneously studied with identical epi-structures.