Open AccessStudy of GePb photodetectors for shortwave infrared detection
Author(s) -
Xiangquan Liu,
Jun Zheng,
Xiuli Li,
Yong Zuo,
Chunlai Xue,
Bingying Cheng
Publication year - 2019
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.27.018038
Subject(s) - materials science , photocurrent , photodetector , optoelectronics , dark current , optics , mercury cadmium telluride , sputter deposition , substrate (aquarium) , infrared , semiconductor , thin film , sputtering , nanotechnology , physics , oceanography , geology
Ge 0.998 Pb 0.002 photodetectors (PDs) with a GePb layer grown on n-type Ge (100) substrate by magnetron sputtering epitaxy were fabricated by complementary metal-oxide semiconductor (CMOS)-compatible technology. For Ge 0.998 Pb 0.002 PDs, the room-temperature dark current density at -1 V was 3.3 A/cm 2 . At room temperature, the GePb PDs demonstrated a longwave cutoff of 2.5 μm and the optical responsivities of GePb PDs ranging from 1500 nm to 2000 nm were measured. A temperature dependence optical characterization of these detectors was conducted and temperature-dependent energy bandgaps of Ge 0.998 Pb 0.002 were derived from the photocurrent spectra.