Near-infrared lateral photovoltaic effect of β-FeSi2 films on SrTiO3 substrate

β-FeSi 2 is of interest for Si-based optoelectronic applications in the past decades. We fabricated β-FeSi 2 hin films on the SrTiO 3 single crystal by KrF-pulsed laser deposition to open a new view of integrating β-FeSi 2 with non-silicon functional materials. After investigating the lateral photovoltaic effect of β-FeSi 2 /SrTiO 3 under the illumination of the 808 nm and 1064 nm steady lasers, we found that the position detection sensitivity can reach 2.68 mVmW -1 mm -1 and 2.24 mVmW -1 mm -1 , respectively. The low degree of nonlinearities of position-sensitive and power-sensitive characteristics provide a promising application of SrTiO 3 -based β-FeSi 2 hin films on position-sensitive detection devices.