Open AccessHybrid absorption/interference wide-angle filter using PECVD Si-Rich SixNy and SiOx for LED lighting
Author(s) -
Joffrey Belin,
Étienne Grondin,
Vincent Aimez,
Abdelatif Jaouad
Publication year - 2019
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.27.012519
Subject(s) - plasma enhanced chemical vapor deposition , materials science , refractive index , optics , optical filter , molar absorptivity , fabrication , optoelectronics , silicon nitride , interference filter , silicon , absorbance , filter (signal processing) , chemical vapor deposition , interference (communication) , wavelength , telecommunications , medicine , channel (broadcasting) , physics , alternative medicine , pathology , computer science , computer vision
We propose a method to fabricate interference filters using Plasma Enhanced Chemical Vapor Deposition (PECVD) to reduce blue and near-infrared wavelengths that are inherent to LED lighting, but that have a negative impact on human health and the environment respectively. We developed a Si-rich silicon nitride (Si-rich Si x N y ) material, with a very high refractive index, a high extinction coefficient in the blue range and a very low extinction coefficient in the rest of the spectrum. We combined this Si-rich Si x N y with silicon oxide (SiO x ) to realize an LED interference filter. The use of a material with a selective absorbance and high refractive index allows a simple fabrication process of the filter composed of six layers only, even for a complex spectral response. Moreover, the filter response is uniform and tolerant to incidence angle variation. With this work, we demonstrate the high potential of PECVD technique for the fabrication of low cost and reproducible interference filters that could be used in various applications.