Open AccessComposite metal substrate for thin film AlGaInP LED applications
Author(s) -
RayHua Horng,
Shreekant Sinha,
C. P. Lee,
Hsiang An Feng,
ChenYen Chung,
Chengyi Tu
Publication year - 2019
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.27.00a397
Subject(s) - invar , materials science , light emitting diode , substrate (aquarium) , optoelectronics , layer (electronics) , wafer , fabrication , diode , composite number , thin film , optics , wafer bonding , thermal expansion , composite material , nanotechnology , medicine , oceanography , alternative medicine , physics , pathology , geology
The fabrication and feasibility assessment of n-side up, thin-epilayer, AlGaInP-based vertical light-emitting-diodes (LEDs; emitting area: 1 mm × 1 mm) with a copper-invar-copper-composite metal (CIC) substrate was obtained by wafer bonding and epilayer transferring technologies. The structure of CIC substrate is a top Cu layer of 20 μm, a middle Invar layer of 64 μm, and a bottom Cu layer of 20 μm. The invar layer consists of Fe and Ni at a ratio of 70% to 30%. The coefficient of thermal expansion for CIC is about 6.1 × 10 -6 /K, which is similar to that of the GaAs substrate (5.7 × 10 -6 /K) and AlGaInP epilayers. Due to the high thermal conductivity (160 W/m-K) of 104-μm-thick CIC, the high performances of the packaged LEDs are obtained. They present a low red shift phenomenon (from 623 to 642 nm for 100 mA to 1 A) and a high output power 212 mW at 800 mA. The CIC substrate can be extended to fabricate high-efficiency thin film LEDs with conventional vertical electrodes.