Open AccessPolarization-pinned emission of a continuous-wave optically pumped nonpolar GaN-based VCSEL using nanoporous distributed Bragg reflectors
Author(s) -
Saadat MishkatUlMasabih,
Ting S. Luk,
Morteza Monavarian,
Daniel Feezell
Publication year - 2019
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.27.009495
Subject(s) - materials science , lasing threshold , distributed bragg reflector , vertical cavity surface emitting laser , optics , distributed bragg reflector laser , optoelectronics , nanoporous , full width at half maximum , laser , dielectric , polarization (electrochemistry) , epitaxy , continuous wave , wavelength , nanotechnology , chemistry , physics , layer (electronics)
A nonpolar GaN-based vertical-cavity surface-emitting laser (VCSEL) using nanoporous bottom epitaxial distributed Bragg reflector (DBR) is demonstrated at room temperature (RT) under continuous-wave (CW) optical pumping. The porous layers enable the epitaxial growth of lattice-matched high-reflectance DBRs without sacrificing the conductive properties needed for high-performance VCSELs. The 2-λ cavity VCSEL reported here employs a hybrid design with top dielectric DBR and bottom nanoporous DBR. Single longitudinal mode lasing is observed at 462 nm with a threshold power density of ~5 kW/cm 2 and a FWHM of ~0.12 nm. The emission polarization was pinned in the a-direction at all measured locations.