Polarization-pinned emission of a continuous-wave optically pumped nonpolar GaN-based VCSEL using nanoporous distributed Bragg reflectors | Zendy

Saadat MishkatUlMasabih | Zendy; Ting S. Luk | Zendy; Morteza Monavarian | Zendy; Daniel Feezell | Zendy

Open Access

Polarization-pinned emission of a continuous-wave optically pumped nonpolar GaN-based VCSEL using nanoporous distributed Bragg reflectors

Author(s) -

Saadat MishkatUlMasabih,

Ting S. Luk,

Morteza Monavarian,

Daniel Feezell

Publication year - 2019

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.27.009495

Subject(s) - materials science , lasing threshold , vertical cavity surface emitting laser , distributed bragg reflector , optics , nanoporous , optoelectronics , full width at half maximum , distributed bragg reflector laser , laser , continuous wave , polarization (electrochemistry) , dielectric , epitaxy , wavelength , chemistry , physics , layer (electronics) , nanotechnology , composite material

A nonpolar GaN-based vertical-cavity surface-emitting laser (VCSEL) using nanoporous bottom epitaxial distributed Bragg reflector (DBR) is demonstrated at room temperature (RT) under continuous-wave (CW) optical pumping. The porous layers enable the epitaxial growth of lattice-matched high-reflectance DBRs without sacrificing the conductive properties needed for high-performance VCSELs. The 2-λ cavity VCSEL reported here employs a hybrid design with top dielectric DBR and bottom nanoporous DBR. Single longitudinal mode lasing is observed at 462 nm with a threshold power density of ~5 kW/cm 2 and a FWHM of ~0.12 nm. The emission polarization was pinned in the a-direction at all measured locations.

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