Open AccessHigh-performance visible to near-infrared photodetectors by using (Cd,Zn)Te single crystal
Author(s) -
Bing Ren,
Jijun Zhang,
Meiyong Liao,
Jian Huang,
Liwen Sang,
Yasuo Koide,
Linjun Wang
Publication year - 2019
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.27.008935
Subject(s) - photodetector , responsivity , materials science , dark current , photoconductivity , optoelectronics , optics , single crystal , visible spectrum , infrared , specific detectivity , semiconductor , crystal (programming language) , physics , nuclear magnetic resonance , programming language , computer science
The authors report on a high-performance metal-semiconductor-metal (MSM) photodetector fabricated on the Cd 0.96 Zn 0.04 Te single crystal with the photoresponse from visible to near infrared region. Benefitting from the high-quality single crystallization, an ultra-low dark current of ~10 -10 A was obtained at a high applied voltage of 10 V, leading to a photo-to-dark-current ratio of more than 10 3 at 700 nm light illumination. The highest responsivity is estimated to be 1.43 A/W with a specific detectivity of 3.31 × 10 12 Jones at 10 V at a relatively lower injection power density. The discrimination ratio between the near infrared region of 800 nm and 900 nm is almost 10 2 , which is high enough for the accurate spectra selectivity. The MSM photodetector also exhibits a fast response speed of ~800 μs and extremely low persistent photoconductivity (PPC), while the PPC is inhibited at high temperatures.