Open AccessEfficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes
Author(s) -
Kareem W. Hamdy,
Erin C. Young,
Abdullah I. Alhassan,
Daniel L. Becerra,
Steven P. DenBaars,
James S. Speck,
Shuji Nakamura
Publication year - 2019
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.27.008327
Subject(s) - materials science , metalorganic vapour phase epitaxy , chemical vapor deposition , optoelectronics , tunnel junction , molecular beam epitaxy , diode , light emitting diode , laser , epitaxy , nitride , optics , layer (electronics) , nanotechnology , quantum tunnelling , physics
We demonstrate high-power edge-emitting laser diodes (LDs) with tunnel junction contacts grown by molecular beam epitaxy (MBE). Under pulsed conditions, lower threshold current densities were observed from LDs with MBE-grown tunnel junctions than from similarly fabricated control LDs with ITO contacts. LDs with tunnel junction contacts grown by metal-organic chemical vapor deposition (MOCVD) were additionally demonstrated. These LDs were fabricated using a p-GaN activation scheme utilizing lateral diffusion of hydrogen through the LD ridge sidewalls. Secondary ion mass spectroscopy measurements of the [Si] and [Mg] profiles in the MBE-grown and MOCVD-grown tunnel junctions were conducted to further investigate the results.