Open AccessFew-photon detection using InAs avalanche photodiodes
Author(s) -
Chee Hing Tan,
A. V. Velichko,
Leh Woon Lim,
Jo Shien Ng
Publication year - 2019
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.27.005835
Subject(s) - avalanche photodiode , photodiode , optics , optoelectronics , wavelength , impact ionization , single photon avalanche diode , materials science , noise (video) , avalanche diode , dark current , quantum efficiency , photon counting , physics , photodetector , ionization , photon , detector , breakdown voltage , ion , quantum mechanics , voltage , artificial intelligence , computer science , image (mathematics)
An avalanche photodiode with a ratio of hole-to-electron ionization coefficients, k = 0, is known to produce negligible excess noise irrespective of the avalanche gain. The low noise amplification process can be utilized to detect very low light levels. In this work, we demonstrated InAs avalanche photodiodes with high external quantum efficiency of 60% (achieved without antireflection coating) at the peak wavelength of 3.48 µm. At 77 K, our InAs avalanche photodiodes show low dark current (limited by 300 K blackbody background radiation), high avalanche gain and negligible excess noise, as InAs exhibits k = 0. They were therefore able to detect very low levels of light, at 15-31 photons per 50 µs laser pulse at 1550 nm wavelength. These correspond to the lowest detected average power by InAs avalanche photodiodes, ranging from 19 to 40 fW. The measurement system's noise floor was dominated by the pre-amplifier. Our results suggest that, with a lower system noise, InAs avalanche photodiodes have high potential for optical detection of single or few-photon signal levels at wavelengths of 1550 nm or longer.