Open AccessCompact polarization beam splitter with a high extinction ratio over S + C + L band
Author(s) -
Ye Tian,
Jifang Qiu,
Chang Liu,
Shenghao Tian,
Ziyun Huang,
Jian Wu
Publication year - 2019
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.27.000999
Subject(s) - optics , extinction ratio , materials science , silicon on insulator , fabrication , beam splitter , waveguide , bandwidth (computing) , insertion loss , polarization (electrochemistry) , broadband , power dividers and directional couplers , optoelectronics , silicon , physics , wavelength , telecommunications , laser , medicine , chemistry , alternative medicine , pathology , computer science
In this paper, we experimentally demonstrate an ultra-broadband high-performance polarization beam splitter (PBS) based on silicon-on-insulator (SOI) platform. The proposed device is based on a directional coupler consisting of a 70-nm taper-etched waveguide and a slot waveguide with a compact coupling length of 11 microns, the structure of which is suitable for a commercial two-step fabrication process. Benefiting from the preferences of coupling TM mode to slot waveguide and restricting TE mode in taper-etched waveguide, the polarization extinction ratios (PER) for TE and TM polarizations can reach as high as 30 dB and 40 dB at 1550 nm based on experimental results, respectively; besides, an ultra-wide operation bandwidth with PER >20 dB is achieved as ~175 nm from 1450 nm to 1625 nm (covering S, C and L bands), or the bandwidth with PER >25 dB is over ~120 nm from 1462 nm to 1582 nm, which is the largest operation bandwidth to the best of our knowledge. At last, the insertion losses (IL) are -0.17 dB and -0.22 dB for TE and TM polarizations at 1550 nm, respectively.