Open Access27 dB gain III–V-on-silicon semiconductor optical amplifier with > 17 dBm output power
Author(s) -
Kasper Van Gasse,
Ruijun Wang,
Günther Roelkens
Publication year - 2019
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.27.000293
Subject(s) - amplifier , optical amplifier , materials science , optoelectronics , photonics , dbm , optics , optical power , silicon photonics , semiconductor , laser , physics , cmos
Hybrid III-V-on-silicon semiconductor optical amplifiers with high-gain and high-output-power are important in many applications such as transceivers, integrated microwave photonics and photonic beamforming. In this work we present the design, fabrication and characterization of high-gain, high-output-power III-V-on-silicon semiconductor optical amplifiers. The amplifiers support a hybrid III-V/Si optical mode to reduce confinement in the active region and increase the saturation power. A small-signal gain of 27 dB, a saturation power of 17.24 dBm and an on-chip output power of 17.5 dBm is measured for a current density of 4.9 kA/cm 2 (power consumption of 540 mW) at room temperature for an amplifier with a total length of 1.45 mm. The amplifiers were realized using a 6 quantum well InGaAsP active region, which was previously used to fabricate high-speed directly modulated DFB lasers, enabling their co-integration.