High beam quality and high peak power Yb:YAG/Cr:YAG microchip laser | Zendy

Xiaoyang Guo | Zendy; Shigeki Tokita | Zendy; Junji Kawanaka | Zendy

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High beam quality and high peak power Yb:YAG/Cr:YAG microchip laser

Author(s) -

Xiaoyang Guo,

Shigeki Tokita,

Junji Kawanaka

Publication year - 2019

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.27.000045

Subject(s) - materials science , laser , optics , laser beam quality , optoelectronics , q switching , beam (structure) , ytterbium , laser beams , doping , physics

The prospect for developing a passively Q-switched Yb:YAG/Cr:YAG monolithic microchip laser that operates at cryogenic temperature is theoretically analyzed. It is concluded that such a system has the potential to deliver laser pulses with improved energy and increased peak power in comparison with composite Yb:YAG/Cr:YAG or Nd:YAG/Cr:YAG devices that are operated at room temperature. Consequently, a cryogenically cooled Yb:YAG/Cr:YAG system is built and the emission performances are investigated. Laser pulses with 3.2 mJ energy, 6.1 MW peak power and high beam quality of M 2 = 1.8 are achieved. By increasing the pump beam diameter, laser pulses with higher energy 32 mJ are obtained at 25 MW peak power with M 2 = 5.4. To our knowledge, these are the best results obtained from passively Q-switched composite Yb:YAG/Cr:YAG monolithic microchip lasers.

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