Dynamic model and bandwidth characterization of InGaAs/GaAsSb type-II quantum wells PIN photodiodes | Zendy

Yaojiang Chen | Zendy; Xuyi Zhao | Zendy; Jian Huang | Zendy; Zhuo Deng | Zendy; Chunfang Cao | Zendy; Qian Gong | Zendy; Baile Chen | Zendy

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Dynamic model and bandwidth characterization of InGaAs/GaAsSb type-II quantum wells PIN photodiodes

Author(s) -

Yaojiang Chen,

Xuyi Zhao,

Jian Huang,

Zhuo Deng,

Chunfang Cao,

Qian Gong,

Baile Chen

Publication year - 2018

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.26.035034

Subject(s) - photodiode , responsivity , optoelectronics , bandwidth (computing) , quantum well , materials science , optics , gallium arsenide , indium gallium arsenide , photodetector , physics , computer science , telecommunications , laser

In this work, we demonstrated a normal incident PIN InGaAs/GaAsSb type-II multiple quantum wells (MQW) photodiode on InP substrate for 2 μm wavelength high-speed operation. The photodiode has a responsivity of 0.35 A/W at room temperature at 2 μm, and a 3 dB bandwidth of 3.7 GHz. A carrier dynamic model is developed to study the bandwidth of the multiple quantum wells photodiode. Simulation results match the experimental data well, and analysis shows that hole transport limits the 3 dB bandwidth performance. By optimizing the MQW design, higher bandwidth performance (>10 GHz) can be achieved.

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