Open AccessDynamic model and bandwidth characterization of InGaAs/GaAsSb type-II quantum wells PIN photodiodes
Author(s) -
Yaojiang Chen,
Xuyi Zhao,
Jian Huang,
Zhuo Deng,
Chunfang Cao,
Qian Gong,
Baile Chen
Publication year - 2018
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.26.035034
Subject(s) - photodiode , responsivity , quantum well , optoelectronics , bandwidth (computing) , materials science , optics , gallium arsenide , indium gallium arsenide , quantum efficiency , photodetector , physics , computer science , telecommunications , laser
In this work, we demonstrated a normal incident PIN InGaAs/GaAsSb type-II multiple quantum wells (MQW) photodiode on InP substrate for 2 μm wavelength high-speed operation. The photodiode has a responsivity of 0.35 A/W at room temperature at 2 μm, and a 3 dB bandwidth of 3.7 GHz. A carrier dynamic model is developed to study the bandwidth of the multiple quantum wells photodiode. Simulation results match the experimental data well, and analysis shows that hole transport limits the 3 dB bandwidth performance. By optimizing the MQW design, higher bandwidth performance (>10 GHz) can be achieved.