Open AccessTwo-photon absorption and non-resonant electronic nonlinearities of layered semiconductor TlGaS2
Author(s) -
Xiufeng Xin,
Fang Liu,
XiaoQing Yan,
Wangwei Hui,
Xin Zhao,
XiaoGuang Gao,
Zhibo Liu
Publication year - 2018
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.26.033895
Subject(s) - optics , ultrashort pulse , attenuation coefficient , absorption (acoustics) , photon , semiconductor , refractive index , materials science , two photon absorption , photonics , kerr effect , nonlinear optics , photonic crystal , optoelectronics , heterodyne (poetry) , physics , nonlinear system , laser , quantum mechanics , acoustics
The ultrafast nonlinear optical properties of bulk TlGaS 2 crystal, a semiconductor with a layered structure, are studied by combining intensity dependent transmission, time-resolved transient absorption, and optical Kerr effect coupled to optical heterodyne detection. TlGaS 2 demonstrates obvious two-photon absorption and electronic nonlinearities at 800 nm. The two-photon absorption coefficient and the nonlinear refractive index are determined to be of the order of 10 -10 cm/W and 10 -14 cm 2 /W, respectively. Furthermore, both the real and imaginary parts of the complex third-order susceptibility tensor elements are extracted. The large ultrafast optical nonlinearities make TlGaS 2 a promising material for application in photonic techniques.