Open AccessInfluence of barrier interlayers on the performance of Mo/Be multilayer mirrors for next-generation EUV lithography
Author(s) -
М. В. Свечников,
Н. И. Чхало,
S. A. Gusev,
A. N. Nechay,
D. E. Pariev,
А. Е. Pestov,
В. Н. Полковников,
D. A. Tatarskiy,
N. N. Salashchenko,
F. Schäfers,
Mewael Sertsu,
Andréy Sokolov,
Yu. A. Vainer,
М. V. Zorina
Publication year - 2018
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.26.033718
Subject(s) - extreme ultraviolet lithography , reflectometry , materials science , optics , lithography , surface finish , transmission electron microscopy , extreme ultraviolet , scattering , reflection (computer programming) , optical coating , electron beam lithography , x ray lithography , optoelectronics , x ray reflectivity , coating , thin film , resist , nanotechnology , layer (electronics) , laser , physics , time domain , computer science , composite material , computer vision , programming language
A comparative study was carried out of the structure and reflection performance of four types of multilayer mirror for extreme ultraviolet lithography at 11.2 nm; these were a pure Mo/Be structure and three Mo/Be-based structures with thin B 4 C, C and Si interlayers. It was demonstrated that Mo/Be mirrors show maximum reflectance at normal incidence, while maximum structural perfection is shown by Mo/Be/Si mirrors. The introduction of B 4 C and C layers into the structure increases the interlayer roughness and reduces the sharpness of the interfaces, adversely affecting the target coating characteristics. Results are presented for studies using four techniques: X-ray reflectometry, small-angle X-ray scattering, atomic force microscopy, and transmission electron microscopy.