Open AccessHigh positional freedom SOI subwavelength grating coupler (SWG) for 300 mm foundry fabrication
Author(s) -
Eng Wen Ong,
Thomas Wallner,
Nicholas M. Fahrenkopf,
Douglas Coolbaugh
Publication year - 2018
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.26.028773
Subject(s) - grating , silicon on insulator , materials science , optics , fabrication , optoelectronics , apodization , blazed grating , holographic grating , diffraction grating , silicon , physics , medicine , alternative medicine , pathology
We present an apodized, single etch-step, subwavelength grating (SWG) high positional freedom (HPF) grating coupler based on the 220 nm silicon-on-insulator (SOI) with 2μm BOX substrate. The grating coupler was designed for 1550 nm light with transverse electric (TE) polarization. It has a measured maximum coupling efficiency of -7.49 dB (17.8%) and a -1 dB/-3 dB bandwidth of ~14 nm/29.5 nm respectively. It was fabricated in a 300mm state of the art CMOS foundry. This work presents an SOI-based grating coupler with the highest-to the best of our knowledge- -1 dB single mode fiber lateral alignment of 21.4 μm × 10.1 μm.