Passive Q-switching induced by few-layer MoTe2 in an Yb:YCOB microchip laser | Zendy

Yanjun Ma | Zendy; Kan Tian | Zendy; Xiaodan Dou | Zendy; Jingnan Yang | Zendy; Yuhang Li | Zendy; Wenjuan Han | Zendy; Honghao Xu | Zendy; Junhai Liu | Zendy

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Passive Q-switching induced by few-layer MoTe₂ in an Yb:YCOB microchip laser

Author(s) -

Yanjun Ma,

Kan Tian,

Xiaodan Dou,

Jingnan Yang,

Yuhang Li,

Wenjuan Han,

Honghao Xu,

Junhai Liu

Publication year - 2018

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.26.025147

Subject(s) - materials science , optics , slope efficiency , saturable absorption , laser , resonator , q switching , pulse duration , sapphire , pulse (music) , optoelectronics , fiber laser , physics , detector

We report on passive Q-switching action induced by a few-layer MoTe 2 saturable absorber in an Yb:YCa 4 O(BO 3 ) 3 (Yb:YCOB) microchip laser. With a sapphire-based few-layer MoTe 2 incorporated into the 4 mm long plane-parallel resonator of the Yb:YCOB microchip laser, efficient stable passively Q-switched operation was achieved under output couplings of 40%-70%, producing, at an incident pump power of 5.0 W, an average output power of 1.58 W at a repetition rate of 704 kHz with a slope efficiency of 36%; the pulse energy and peak power were respectively 2.25 μJ and 40.8 W, while the shortest pulse duration obtained was 52 ns.

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