Open AccessPassive Q-switching induced by few-layer MoTe2 in an Yb:YCOB microchip laser
Author(s) -
Yanjun Ma,
Kui Tian,
Xiaodan Dou,
Jie Yang,
Yuhang Li,
Wenjuan Han,
Honghao Xu,
Junhai Liu
Publication year - 2018
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.26.025147
Subject(s) - materials science , optics , saturable absorption , laser , slope efficiency , resonator , pulse duration , q switching , sapphire , pulse (music) , optoelectronics , fiber laser , physics , detector
We report on passive Q-switching action induced by a few-layer MoTe 2 saturable absorber in an Yb:YCa 4 O(BO 3 ) 3 (Yb:YCOB) microchip laser. With a sapphire-based few-layer MoTe 2 incorporated into the 4 mm long plane-parallel resonator of the Yb:YCOB microchip laser, efficient stable passively Q-switched operation was achieved under output couplings of 40%-70%, producing, at an incident pump power of 5.0 W, an average output power of 1.58 W at a repetition rate of 704 kHz with a slope efficiency of 36%; the pulse energy and peak power were respectively 2.25 μJ and 40.8 W, while the shortest pulse duration obtained was 52 ns.