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Watt-level Tm:LiYF4 channel waveguide laser produced by diamond saw dicing
Author(s) -
Pavel Loiko,
Rémi Soulard,
Gurvan Brasse,
JeanLouis Doualan,
Blandine Guichardaz,
Alain Braud,
Aleksey Tyazhev,
Ammar Hideur,
Patrice Camy
Publication year - 2018
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.26.024653
Subject(s) - wafer dicing , materials science , laser , sapphire , optics , diamond , epitaxy , continuous wave , optoelectronics , waveguide , femtosecond , amplifier , wafer , physics , cmos , layer (electronics) , composite material
Low-loss surface channel waveguides with a cross-section of 30 × 30 μm 2 are produced by diamond saw dicing of 6.2 at.% Tm 3+ , 3.5 at.% Gd 3+ :LiYF 4 films grown by liquid phase epitaxy (LPE) on (001)-oriented bulk undoped LiYF 4 substrates. Pumped by a Ti:Sapphire laser at 783 nm, a continuous-wave Tm:LiYF 4 waveguide laser generated 1.30 W at 1880 nm (for π-polarization) with a slope efficiency of 80% with respect to the absorbed pump power. The laser threshold was at 80 mW. The waveguide morphology was studied revealing low roughness (3 ± 2 μm) as expressed by the propagation losses of <0.3 dB/cm. A combination of LPE and diamond saw dicing is a promising technology for multi-watt single-mode channel waveguide lasers and amplifiers.

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