
Method for direct observation of Bloch oscillations in semiconductors
Author(s) -
Liang Li,
Pengfei Lan,
Xi Liu,
Lixin He,
Xinxin Zhu,
Oliver D. Mücke,
Peixiang Lu
Publication year - 2018
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.26.023844
Subject(s) - bloch oscillations , oscillation (cell signaling) , physics , bloch equations , population , semiconductor , harmonics , band gap , bloch wave , optics , narrow gap semiconductor , pulse (music) , atomic physics , optoelectronics , condensed matter physics , electron , quantum mechanics , voltage , chemistry , demography , sociology , detector , biochemistry
We propose a scheme for real-time observations of Bloch oscillations in semiconductors using time-resolved band gap emission spectroscopy. By solving the time-dependent Schrödinger equation, we find one remarkable band gap emission besides the normal high harmonics generated in the interaction of a mid-infrared laser pulse and a semiconductor. It is shown that the band gap emission yield is directly connected to the population in the conduction band (CB). By adopting a pump-probe scheme, the time-dependent population in the CB, that is the dynamical Bloch oscillation, can be probed by measuring the band gap emission signal versus pump-probe delay. We also present a model based on accelerated Bloch states to explain the time-resolved measurement of dynamical Bloch oscillation.