Open AccessCMOS compatible all-silicon TM pass polarizer based on highly doped silicon waveguide
Author(s) -
Md. Ghulam Saber,
Nicolás Abadía,
David V. Plant
Publication year - 2018
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.26.020878
Subject(s) - polarizer , extinction ratio , materials science , silicon on insulator , silicon , optics , waveguide , optoelectronics , silicon photonics , insertion loss , hybrid silicon laser , birefringence , physics , wavelength
We propose and analyze via simulation a novel approach to implement a complementary metal-oxide-semiconductor compatible and high extinction ratio transverse magnetic pass polarizer on the silicon-on-insulator platform with a 340 nm thick silicon core. The TM-pass polarizer utilizes a highly doped p-silicon waveguide as the transverse hybrid plasmonic waveguide. We observed an extinction ratio of 30.11 dB and an insertion loss of 3.08 dB for a device length of 15 µm. The fabrication process of the proposed TM-pass polarizer is simpler compared to the state-of-the-art since it only uses silicon waveguides and does not require any special material or feature size.