13 μm InAs/GaAs quantum dot DFB laser integrated on a Si waveguide circuit by means of adhesive die-to-wafer bonding | Zendy

Sarah Uvin | Zendy; Sulakshna Kumari | Zendy; Andreas De Groote | Zendy; Steven Verstuyft | Zendy; Guy Lepage | Zendy; Peter Verheyen | Zendy; Joris Van Campenhout | Zendy; Geert Morthier | Zendy; Dries Van Thourhout | Zendy; Günther Roelkens | Zendy

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13 μm InAs/GaAs quantum dot DFB laser integrated on a Si waveguide circuit by means of adhesive die-to-wafer bonding

Author(s) -

Sarah Uvin,

Sulakshna Kumari,

Andreas De Groote,

Steven Verstuyft,

Guy Lepage,

Peter Verheyen,

Joris Van Campenhout,

Geert Morthier,

Dries Van Thourhout,

Günther Roelkens

Publication year - 2018

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.26.018302

Subject(s) - lasing threshold , materials science , optoelectronics , photonic integrated circuit , wafer , quantum dot , laser , quantum dot laser , wafer bonding , photonics , waveguide , optics , indium arsenide , silicon , gallium arsenide , semiconductor laser theory , wavelength , silicon photonics , semiconductor , physics

In this paper we report a single mode InAs/GaAs quantum dot distributed feedback laser at 1.3 μm wavelength heterogeneously integrated on a Si photonics waveguide circuit. Single mode lasing around 1300 nm with a side-mode suppression ratio higher than 40 dB is demonstrated. High temperature operation with continuous wave lasing up to 100°C is obtained. Threshold current densities as low as 205 A/cm 2 were measured. These devices are attractive candidates to use in uncooled silicon photonic transceivers in data centers.

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