Open Access13 μm InAs/GaAs quantum dot DFB laser integrated on a Si waveguide circuit by means of adhesive die-to-wafer bonding
Author(s) -
Sarah Uvin,
Sulakshna Kumari,
Andreas De Groote,
Steven Verstuyft,
Guy Lepage,
Peter Verheyen,
Joris Van Campenhout,
Geert Morthier,
Dries Van Thourhout,
Günther Roelkens
Publication year - 2018
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.26.018302
Subject(s) - lasing threshold , materials science , optoelectronics , photonic integrated circuit , wafer , quantum dot , laser , quantum dot laser , wafer bonding , photonics , waveguide , optics , indium arsenide , silicon , gallium arsenide , semiconductor laser theory , wavelength , silicon photonics , semiconductor , physics
In this paper we report a single mode InAs/GaAs quantum dot distributed feedback laser at 1.3 μm wavelength heterogeneously integrated on a Si photonics waveguide circuit. Single mode lasing around 1300 nm with a side-mode suppression ratio higher than 40 dB is demonstrated. High temperature operation with continuous wave lasing up to 100°C is obtained. Threshold current densities as low as 205 A/cm 2 were measured. These devices are attractive candidates to use in uncooled silicon photonic transceivers in data centers.