Open AccessInvestigation of deep level defects on Beryllium compensation doping of In053Ga047As/GaAs049Sb051 type-II superlattice photodiodes
Author(s) -
Jinlan Li,
Zhicheng Xu,
Ping Han,
Jianxin Chen,
Xiaoli Ji
Publication year - 2018
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.26.015308
Subject(s) - materials science , beryllium , photodiode , deep level transient spectroscopy , doping , superlattice , optoelectronics , gallium arsenide , spectroscopy , dark current , optics , photodetector , physics , silicon , quantum mechanics , nuclear physics
In this paper, deep level transient spectroscopy (DLTS) characterization was performed on Beryllium compensation doping of InGaAs/GaAsSb type-II superlattice photodiode. Three electron traps with the energy levels located at E c -0.11 eV (E1), E c -0.28 eV (E2), E c -0.17 eV (E3), and a hole trap situated at E v + 0.25 eV (H1) were revealed. The position distribution and depth concentration of these traps in SL absorption region was also explored. Furthermore, the bandlike states (E2) and localized states (E1 and H1) of extended defects were confirmed by DLTS measurements as a function of the filling-pulse time, these traps as generation-recombination centers are responsible for dominant dark current.