Open AccessCarrier dynamics of InxGa1-xN/GaN multiple quantum wells grown on (−201) β-Ga2O3for bright vertical light emitting diodes
Author(s) -
Mufasila Mumthaz Muhammed,
Jian Xu,
Nimer Wehbe,
Iman S. Roqan
Publication year - 2018
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.26.014869
Subject(s) - photoluminescence , materials science , optoelectronics , spontaneous emission , substrate (aquarium) , quantum well , gallium nitride , band gap , wide bandgap semiconductor , quantum efficiency , non radiative recombination , optics , transmission electron microscopy , semiconductor , physics , laser , nanotechnology , semiconductor materials , layer (electronics) , oceanography , geology
High-quality In x Ga 1-x N/GaN multi-quantum well (MQW) structures (0.05≤x≤0.13), are successfully grown on transparent and conductive (-201)-oriented β-Ga 2 O 3 substrate. Scanning-transmission electron microscopy and secondary ion mass spectrometry (SIMS) show well-defined high quality MQWs, while the In and Ga compositions in the wells and the barriers are estimated by SIMS. Temperature-dependant Photoluminescence (PL) confirms high optical quality with a strong bandedge emission and negligble yellow band. time-resolved PL measurements (via above/below-GaN bandgap excitations) explain carrier dynamics, showing that the radiative recombination is predominant. Our results demonstrate that (-201)-oriented β-Ga 2 O 3 is a strong candidate as a substrate for III-nitride-based vertical- emitting devices.