Carrier dynamics of InxGa1-xN/GaN multiple quantum wells grown on (−201) β-Ga2O3for bright vertical light emitting diodes | Zendy

Mufasila Mumthaz Muhammed | Zendy; Jian Xu | Zendy; Nimer Wehbe | Zendy; Iman S. Roqan | Zendy

Open Access

Carrier dynamics of In_xGa_1-xN/GaN multiple quantum wells grown on (−201) β-Ga₂O₃for bright vertical light emitting diodes

Author(s) -

Mufasila Mumthaz Muhammed,

Jian Xu,

Nimer Wehbe,

Iman S. Roqan

Publication year - 2018

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.26.014869

Subject(s) - photoluminescence , materials science , optoelectronics , spontaneous emission , substrate (aquarium) , quantum well , gallium nitride , band gap , wide bandgap semiconductor , quantum efficiency , non radiative recombination , optics , transmission electron microscopy , semiconductor , physics , laser , nanotechnology , semiconductor materials , layer (electronics) , oceanography , geology

High-quality In x Ga 1-x N/GaN multi-quantum well (MQW) structures (0.05≤x≤0.13), are successfully grown on transparent and conductive (-201)-oriented β-Ga 2 O 3 substrate. Scanning-transmission electron microscopy and secondary ion mass spectrometry (SIMS) show well-defined high quality MQWs, while the In and Ga compositions in the wells and the barriers are estimated by SIMS. Temperature-dependant Photoluminescence (PL) confirms high optical quality with a strong bandedge emission and negligble yellow band. time-resolved PL measurements (via above/below-GaN bandgap excitations) explain carrier dynamics, showing that the radiative recombination is predominant. Our results demonstrate that (-201)-oriented β-Ga 2 O 3 is a strong candidate as a substrate for III-nitride-based vertical- emitting devices.

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