Open AccessHigh-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform
Author(s) -
Wei Wang,
Dian Lei,
YiChiau Huang,
Kwang Hong Lee,
Wan-Khai Loke,
Yuan Dong,
Shengqiang Xu,
Chuan Seng Tan,
Hong Wang,
S. F. Yoon,
Xiao Gong,
Yee-Chia Yeo
Publication year - 2018
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.26.010305
Subject(s) - photodetector , optoelectronics , materials science , transistor , semiconductor , field effect transistor , cmos , schottky barrier , silicon on insulator , optics , voltage , silicon , electrical engineering , physics , engineering , diode
We report the first demonstration of high-performance GeSn metal-semiconductor-metal (MSM) photodetector and GeSn p-type fin field-effect transistor (pFinFET) on an advanced GeSn-on-insulator (GeSnOI) platform by complementary metal-oxide-semiconductor (CMOS) compatible processes. The detection range of GeSn photodetector is extended beyond 2 µm, with responsivities of 0.39 and 0.10 A/W at 1550 nm and 2003 nm, respectively. Through the insertion of an ultrathin Al 2 O 3 Schottky-barrier-enhancement layer, the dark current IDark of the GeSn photodetector is suppressed by more than 2 orders of magnitude. An impressive IDark of ~65 nA was achieved at an operating voltage of 1.0 V. A frequency response measurement reveals the achievement of a 3-dB bandwidth of ~1.4 GHz at an illumination wavelength of 2 µm. GeSn pFinFET with fin width (Wfin) scaled down to 15 nm was also fabricated on the GeSnOI platform, exhibiting a small subthreshold swing (S) of 93 mV/decade, a high drive current of 176 µA/µm, and good control of short channel effects (SCEs). This work paves the way for realizing compact, low-cost, and multi-functional GeSn-on-insulator opto-electronic integrated circuits.