z-logo
open-access-imgOpen Access
Roles of polarization effects in InGaN/GaN solar cells and comparison of p-i-n and n-i-p structures
Author(s) -
Kun Wang,
Quan Wang,
Jun Chu,
Hongling Xiao,
Xiaoliang Wang,
Zhanguo Wang
Publication year - 2018
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.26.00a946
Subject(s) - indium , band diagram , electric field , polarization (electrochemistry) , materials science , charge carrier , optoelectronics , physics , band gap , condensed matter physics , chemistry , quantum mechanics
The p-i-n and n-i-p InGaN/GaN solar cells (SCs) with Ga-face and N-face under different Indium composition were investigated and compared. From the charge distribution analysis, it can be deduced that if p-i-n was converted to n-i-p and the polarity of the SC was reversed simultaneously, or vice versa, the role of polarization effect (i.e. whether hinder or facilitate the photon-generated carriers transport) for the two SC structures would be resembling, though they had difference in degrees. The SC performance, energy band diagram at zero bias condition, recombination rate distribution and carrier concentration distribution of these SCs were analyzed, which suggested that although the polarization effect could facilitate the carrier transport both in p-i-n N-face SC and n-i-p Ga-face SC, the p-i-n N-face SC was apt to have better performance more or less if the barrier induced by band-offset at the hetero-interface would not block the carrier transport dominantly, e.g. when Indium content was less than or equal to 0.3. Besides, the high Indium content would result in the high band-offset barrier, and the barrier would affect the carrier transport in two ways, one was to hamper the carrier transport directly, and the other was to influence the electric field in i-region indirectly.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here