Infrared photocurrent management in monolithic perovskite/silicon heterojunction tandem solar cells by using a nanocrystalline silicon oxide interlayer
Author(s) -
Luana Mazzarella,
Matteo Werth,
Klaus Jäger,
Marko Jošt,
Lars Korte,
Steve Albrecht,
Rutger Schlatmann,
Bernd Stannowski
Publication year - 2018
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.26.00a487
Subject(s) - materials science , photocurrent , optoelectronics , silicon , tandem , nanocrystalline material , perovskite (structure) , refractive index , heterojunction , doping , nanocrystalline silicon , oxide , absorption (acoustics) , optics , infrared , crystalline silicon , nanotechnology , composite material , chemical engineering , amorphous silicon , physics , engineering , metallurgy
We performed optical simulations using hydrogenated nanocrystalline silicon oxide (nc-SiO x :H) as n-doped interlayer in monolithic perovskite/c-Si heterojunction tandem solar cells. Depending on the adjustable value of its refractive index (2.0 - 2.7) and thickness, nc-SiO x :H allows to optically manage the infrared light absorption in the c-Si bottom cell minimizing reflection losses. We give guidelines for nc-SiO x :H optimization in tandem devices in combination with a systematic investigation of the effect of the surface morphology (flat or textured) on the photocurrent density. For full-flat and rear textured devices, we found matched photocurrents higher than 19 and 20 mA/cm 2 , respectively, using a 90 nm nc-SiO x :H interlayer with a refractive index of 2.7.
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