Open AccessSemipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications
Author(s) -
Chao Shen,
Tien Khee Ng,
Changmin Lee,
Shuji Nakamura,
James S. Speck,
Steven P. DenBaars,
Ahmed Y. Alyamani,
Munir M. ElDesouki,
Boon S. Ooi
Publication year - 2018
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.26.00a219
Subject(s) - optoelectronics , materials science , visible light communication , photonics , laser , optical amplifier , amplifier , photonic integrated circuit , laser diode , quantum well , semiconductor laser theory , diode , optical communication , optics , light emitting diode , physics , cmos
GaN-based semiconductor optical amplifier (SOA) and its integration with laser diode (LD) is an essential building block yet to be demonstrated for III-nitride photonic integrated circuits (PICs) at visible wavelength. This paper presents the InGaN/GaN quantum well (QW) based dual-section LD consisting of integrated amplifier and laser gain regions fabricated on a semipolar GaN substrate. The threshold current in the laser gain region was favorably reduced from 229mA to 135mA at SOA driving voltages, V SOA , of 0V and 6.25V, respectively. The amplification effect was measured based on a large gain of 5.7 dB at V SOA = 6.25V from the increased optical output power of 8.2 mW to 30.5 mW. Such integrated amplifier can be modulated to achieve Gbps data communication using on-off keying technique. The monolithically integrated amplifier-LD paves the way towards the III-nitride on-chip photonic system, providing a compact, low-cost, and multi-functional solution for applications such as smart lighting and visible light communications.