Open AccessNear-field thermal rectification devices using phase change periodic nanostructure
Author(s) -
Alok Ghanekar,
Yanpei Tian,
Margaret Speed Ricci,
Sig Zhang,
Otto J. Gregory,
Yi Zheng
Publication year - 2018
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.26.00a209
Subject(s) - materials science , heat sink , optoelectronics , thermal , transistor , rectification , diode , optics , thermal radiation , grating , physics , thermodynamics , power (physics) , quantum mechanics , voltage
We theoretically analyze two near-field thermal rectification devices: a radiative thermal diode and a thermal transistor that utilize a phase change material to achieve dynamic control over heat flow by exploiting metal-insulator transition of VO 2 near 341 K. The thermal analogue of electronic diode allows high heat flow in one direction while it restricts the heat flow when the polarity of temperature gradient is reversed. We show that with the introduction of 1-D rectangular grating, thermal rectification is dramatically enhanced in the near-field due to reduced tunneling of surface waves across the interfaces for negative polarity. The radiative thermal transistor also works around phase transition temperature of VO 2 and controls heat flow. We demonstrate a transistor-like behavior wherein heat flow across the source and the drain can be greatly varied by making a small change in gate temperature.