Open AccessNonlinear optical property of a Bi-doped GaAs semiconductor saturable absorber
Author(s) -
Ruiheng Xu,
Shengzhi Zhao,
Kejian Yang,
Guiqiu Li,
Tao Li,
Dechun Li
Publication year - 2018
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.26.008542
Subject(s) - saturable absorption , materials science , nanosecond , optoelectronics , femtosecond , optics , absorption (acoustics) , doping , attenuation coefficient , laser , gallium arsenide , two photon absorption , semiconductor , fiber laser , wavelength , physics , composite material
By using an Open-Aperture Z-scan technique with both femtosecond and nanosecond laser pulses at 1064nm, the nonlinear optical properties of GaAs and Bi-doped GaAs, including the saturable absorption property and reverse saturable absorption property are systematically measured and analyzed directly in detail. Compared to pure GaAs, Bi-doped GaAs has a lower saturation intensity, wider saturable absorption energy region, lower two-photon absorption coefficient, better saturable absorption response and stronger optical limiting response. The results suggest that the incorporation of Bismuth in GaAs is an effective way of improving the nonlinear optical properties of GaAs, which provide crucial experimental evidence for that the characteristics of the passively Q-switched laser with Bi-doped GaAs saturable absorber is better than pure GaAs.