Open AccessLow dark current broadband 360-1650 nm ITO/Ag/n-Si Schottky photodetectors
Author(s) -
Zhiwei Huang,
Yichen Mao,
Guangyang Lin,
Xiaohui Yi,
Ailing Chang,
Cheng Li,
Songyan Chen,
Wei Huang,
Jianyuan Wang
Publication year - 2018
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.26.005827
Subject(s) - dark current , responsivity , photodetector , materials science , optoelectronics , schottky diode , schottky barrier , diode , optics , wavelength , specific detectivity , physics
This work designed an ITO/Ag/n-Si Schottky photodetector with broad wavelength detection and low dark current. The introduction of Ag interfacial layer and post rapid thermal annealing dramatically increase the barrier height of ITO/n-Si Schottky diode by 0.32 eV, leading to the 2300 × reduction of dark current. A well-behaved ITO/Ag (8 nm)/n-Si Schottky diode with a high rectification ratio ( ± 1 V) of 4 × 10 5 and low dark current (-1 V) of 9.2 nA was achieved. Such low dark current device spontaneously provides high sensitivity for visible/near infrared wavelength detection, in which substantial responsivity for wavelengths from 360 to 1650 nm was realized through both inter-band and internal photoemission. The design here provides an encouraging strategy for monolithically integrated pure Si photodetectors operating at long wavelength up to 1650 nm.