Open AccessHybrid graphene/GaN ultraviolet photo-transistors with high responsivity and speed
Author(s) -
Huijun Tian,
Qiaoli Liu,
Anqi Hu,
Xiaoying He,
Zonghai Hu
Publication year - 2018
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.26.005408
Subject(s) - responsivity , graphene , photodetector , materials science , optoelectronics , ultraviolet , transistor , optics , nanotechnology , voltage , physics , quantum mechanics
In this work, we explore the possibility of using hybrid graphene/GaN phototransistors to get high responsivity, high speed, and large photosensitive area. The responsivity of our hybrid graphene/GaN phototransistors with a relatively large 15.2 mm 2 active area reaches 361 mA/W at 10 V and the response time is ~5 ms, much better performance than traditional GaN photodetectors. This is because graphene acts as the carrier transport channel with a high mobility and greatly increases the charge collection efficiency. Our results should shed more light on the role of graphene in hybrid phototransistors and open a feasible pathway to develop large area ultraviolet photodetectors with high responsivity and high speed.