Open AccessRoom-temperature electrically pumped InGaN-based microdisk laser grown on Si
Author(s) -
Meixin Feng,
Jingyu He,
Qian Sun,
Hongwei Gao,
Zengcheng Li,
Yu Zhou,
Jianping Liu,
Shuming Zhang,
Deyao Li,
Liqun Zhang,
Xiaojuan Sun,
Dabing Li,
Huaibing Wang,
Masao Ikeda,
Rongxin Wang,
Hui Yang
Publication year - 2018
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.26.005043
Subject(s) - lasing threshold , materials science , optoelectronics , laser , optics , silicon , photonics , whispering gallery , fabrication , etching (microfabrication) , whispering gallery wave , resonator , wavelength , layer (electronics) , nanotechnology , medicine , physics , alternative medicine , pathology
Silicon photonics has been longing for an efficient on-chip light source that is electrically driven at room temperature. Microdisk laser featured with low-loss whispering gallery modes can emit directional lasing beam through a closely coupled on-chip waveguide efficiently, and hence is particularly suitable for photonics integration. The realization of electrically pumped III-nitride microdisk laser grown on Si has been impeded by the conventional undercut structure, poor material quality, and a limited quality of GaN microdisk formed by dry etching. Here we report a successful fabrication of room-temperature electrically pumped InGaN-based microdisk lasers grown on Si. A dramatic narrowing of the electroluminescence spectral line-width and a clear discontinuity in the slope of light output power plotted as a function of the injection current provide an unambiguous evidence of lasing. This is the first observation of electrically pumped lasing in InGaN-based microdisk lasers grown on Si at room temperature.