Open AccessInGaAsP Mach–Zehnder interferometer optical modulator monolithically integrated with InGaAs driver MOSFET on a III-V CMOS photonics platform
Author(s) -
Jin-Kown Park,
Shinichi Takagi,
Mitsuru Takenaka
Publication year - 2018
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.26.004842
Subject(s) - materials science , optoelectronics , mach–zehnder interferometer , optical modulator , photonics , mosfet , electro optic modulator , indium gallium arsenide , photonic integrated circuit , field effect transistor , cmos , interferometry , optics , gallium arsenide , phase modulation , transistor , voltage , electrical engineering , physics , phase noise , engineering
We demonstrated the monolithic integration of a carrier-injection InGaAsP Mach-Zehnder interferometer (MZI) optical modulator and InGaAs metal-oxide-semiconductor field-effect transistor (MOSFET) on a III-V-on-insulator (III-V-OI) wafer. A low-resistivity lateral PIN junction was formed along an InGaAsP rib waveguide by Zn diffusion and Ni-InGaAsP alloy, enabling direct driving of the InGaAsP optical modulator by the InGaAs MOSFET. A π phase shift of the InGaAsP optical modulator was obtained through the injection of a drain current from the InGaAs MOSFET with a gate voltage of approximately 1 V. This proof-of-concept demonstration of the monolithic integration of the InGaAsP optical modulator and InGaAs driver MOSFET will enable us to develop high-performance and low-power electronic-photonic integrated circuits on a III-V CMOS photonics platform.